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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 900 V 1000 V ID25 6A 6A RDS(on) 1.8 W 2.0 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 6N90 6N100 Maximum Ratings 900 1000 20 30 6 24 6 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W C C C C Nm/lb.in. G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 TO-204 = 18 g, TO-247 = 6 g Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 91529E(10/95) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6N90 6N100 900 1000 2.0 4.5 100 TJ = 25C TJ = 125C 250 1 1.8 2.0 V V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 6N90 6N100 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 6N90 IXFM 6N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 6 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 180 45 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 W (External) 40 100 60 88 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 21 38 100 110 200 100 130 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH 6N100 IXFM 6N100 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 24 1.5 250 400 0.5 1.0 7.5 9.0 A A J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TO-204 AA (IXFM) Outline V ns ns mC mC A A Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 6N90 IXFM 6N90 Fig. 1 Output Characteristics 9 8 7 TJ =25C VGS = 10V IXFH 6N100 IXFM 6N100 Fig. 2 Input Admittance 9 6V 8 7 ID - Amperes ID - Amperes 6 5 4 3 2 1 0 5V 6 5 4 3 2 1 TJ = 25C TJ = 125C TJ = - 55C 0 5 10 15 20 25 30 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 3.0 TJ =25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.8 RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 3.0A RDS(on) - Ohms 2.6 2.4 2.2 VGS= 15V VGS= 10V 2.0 1.8 0 2 4 6 8 10 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C 7 6 Fig. 5 Drain Current vs. Case Temperature 1.2 1.1 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage VGS(th) BVDSS 6N90 BV/VG(th) - Normalized ID - Amperes 5 4 3 2 1 0 -50 6N100 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ- Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFH 6N90 IXFM 6N90 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 3.0A IG = 10mA IXFH 6N100 IXFM 6N100 Fig.8 Forward Bias Safe Operating Area 10s 10 Limited by RDS(on) 100s 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 ID - Amperes VGE - Volts 1ms 1 10ms 100ms 6N90 limit 6N100 limit 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 9 8 7 f = 1 MHz VDS = 25V Fig.10Source Current vs. Source to Drain Voltage Ciss Capacitance - pF ID - Amperes 6 5 4 3 2 TJ = 125C TJ = 25C Coss Crss 1 10 15 20 25 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VDS - Volts Fig.11 Transient Thermal Impedance 1.000 Thermal Response - K/W D=0.5 0.100 D=0.2 D=0.1 D=0.05 D=0.02 0.010 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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